GD25D10CTIGR
  • image of 存储器>GD25D10CTIGR
  • image of 存储器>GD25D10CTIGR
GD25D10CTIGR
Memory
GigaDevice Semiconductor (HK) Limited
IC FLASH 1MBIT
-
Tape & Reel (TR) Cut Tape (CT)
-
image of 存储器>GD25D10CTIGR
image of 存储器>GD25D10CTIGR
GD25D10CTIGR
Memory
GigaDevice Semiconductor (HK) Limited
IC FLASH 1MBIT
-
Tape & Reel (TR) Cut Tape (CT)
-
PDF(1)
TYPEDESCRIPTION
MfrGigaDevice Semiconductor (HK) Limited
Series-
PackageTape & Reel (TR)
Part StatusActive
Memory TypeNon-Volatile
Memory FormatFLASH
TechnologyFLASH - NOR
Memory Size1Mb (128K x 8)
Memory InterfaceSPI - Dual I/O
Clock Frequency100 MHz
Write Cycle Time - Word, Page50µs, 4ms
Voltage - Supply2.7V ~ 3.6V
Operating Temperature-40°C ~ 85°C (TA)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOP
Base Product NumberGD25D10
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