GD25S512MDYIGR
  • image of 存储器>GD25S512MDYIGR
  • image of 存储器>GD25S512MDYIGR
GD25S512MDYIGR
Memory
GigaDevice Semiconductor (HK) Limited
IC FLASH 512MBI
-
Tape & Reel (TR) Cut Tape (CT)
-
image of 存储器>GD25S512MDYIGR
image of 存储器>GD25S512MDYIGR
GD25S512MDYIGR
Memory
GigaDevice Semiconductor (HK) Limited
IC FLASH 512MBI
-
Tape & Reel (TR) Cut Tape (CT)
-
PDF(1)
TYPEDESCRIPTION
MfrGigaDevice Semiconductor (HK) Limited
Series-
PackageTape & Reel (TR)
Part StatusActive
Memory TypeNon-Volatile
Memory FormatFLASH
TechnologyFLASH - NOR
Memory Size512Mb (64M x 8)
Memory InterfaceSPI - Quad I/O
Clock Frequency104 MHz
Write Cycle Time - Word, Page50µs, 2.4ms
Voltage - Supply2.7V ~ 3.6V
Operating Temperature-40°C ~ 85°C (TA)
Mounting TypeSurface Mount
Package / Case8-WDFN Exposed Pad
Supplier Device Package8-WSON (6x8)
Base Product NumberGD25S512
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