GD5F1GQ4UFYIGR
  • image of 存储器>GD5F1GQ4UFYIGR
  • image of 存储器>GD5F1GQ4UFYIGR
GD5F1GQ4UFYIGR
Memory
GigaDevice Semiconductor (HK) Limited
IC FLASH 1GBIT
-
Tape & Reel (TR) Cut Tape (CT)
-
image of 存储器>GD5F1GQ4UFYIGR
image of 存储器>GD5F1GQ4UFYIGR
GD5F1GQ4UFYIGR
Memory
GigaDevice Semiconductor (HK) Limited
IC FLASH 1GBIT
-
Tape & Reel (TR) Cut Tape (CT)
-
PDF(1)
TYPEDESCRIPTION
MfrGigaDevice Semiconductor (HK) Limited
Series-
PackageTape & Reel (TR)
Part StatusNot For New Designs
Memory TypeNon-Volatile
Memory FormatFLASH
TechnologyFLASH - NAND
Memory Size1Gb (128M x 8)
Memory InterfaceSPI - Quad I/O
Clock Frequency120 MHz
Write Cycle Time - Word, Page700µs
Voltage - Supply2.7V ~ 3.6V
Operating Temperature-40°C ~ 85°C (TA)
Mounting TypeSurface Mount
Package / Case8-WDFN Exposed Pad
Supplier Device Package8-WSON (6x8)
Base Product NumberGD5F1GQ4
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